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                                       Details for article 4 of 16 found articles
 
 
  Developing the Guard Ring Topology of Power Silicon Diodes with a Blocking Voltage of up to 6.7 kV
 
 
Title: Developing the Guard Ring Topology of Power Silicon Diodes with a Blocking Voltage of up to 6.7 kV
Author: Sopova, O. V.
Kritskaya, T. B.
Appeared in: Russian microelectronics
Paging: Volume 48 () nr. 7 pages 462-466
Year: 2020-03-10
Contents:
Publisher: Pleiades Publishing, Moscow
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 4 of 16 found articles
 
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