|
| << previous | next >> |
Journal description
All volumes of the corresponding journal
All issues of the corresponding volume
All articles of the corresponding issues
Details for article 4 of 16 found articles
| Title: |
Features of defect formation under the thermal treatment of dislocation-free single-crystal large-diameter silicon wafers with the specified distribution of oxygen-containing gettering centers in the bulk |
| Author: |
Vasilév, Yu. B. Verezub, N. A. Mezhennyi, M. V. Prosolovich, V. S. Prostomolotov, A. I. Reznik, V. Ya. |
| Appeared in: |
Russian microelectronics |
| Paging: | Volume 42 (2013) nr. 8 pages 467-476 |
| Year: |
2013 |
| Contents: | |
| Publisher: |
Springer US, Boston |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 4 of 16 found articles
| << previous | next >> |