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                                       Details for article 4 of 7 found articles
 
 
  Plasma parameters and mechanisms of GaAs reactive plasma etching in mixtures of HCl with argon and chlorine
 
 
Title: Plasma parameters and mechanisms of GaAs reactive plasma etching in mixtures of HCl with argon and chlorine
Author: Dunaev, A. V.
Pivovarenok, S. A.
Efremov, A. M.
Svettsov, V. I.
Kapinos, S. P.
Yudina, A. V.
Appeared in: Russian microelectronics
Paging: Volume 42 (2013) nr. 4 pages 212-219
Year: 2013
Contents:
Publisher: Springer US, Boston
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 4 of 7 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands