Digital Library
Close Browse articles from a journal
 
<< previous    next >>
     Journal description
       All volumes of the corresponding journal
         All issues of the corresponding volume
           All articles of the corresponding issues
                                       Details for article 2 of 7 found articles
 
 
  Characteristics of double-gate SOI CMOS nanotransistors for promising technologies with a low power consumption level
 
 
Title: Characteristics of double-gate SOI CMOS nanotransistors for promising technologies with a low power consumption level
Author: Massal’skii, N. V.
Appeared in: Russian microelectronics
Paging: Volume 42 (2013) nr. 1 pages 40-47
Year: 2013
Contents:
Publisher: SP MAIK Nauka/Interperiodica, Dordrecht
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 2 of 7 found articles
 
<< previous    next >>
 
 Koninklijke Bibliotheek - National Library of the Netherlands