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                                       Details for article 3 of 13 found articles
 
 
  Degradation pattern of thin HfO2 films on Si(100) under ultrahigh-vacuum annealing: An investigation by x-ray photoelectron spectroscopy and low-energy ion scattering
 
 
Title: Degradation pattern of thin HfO2 films on Si(100) under ultrahigh-vacuum annealing: An investigation by x-ray photoelectron spectroscopy and low-energy ion scattering
Author: Zenkevich, A. V.
Lebedinskii, Y. Y.
Barantsev, N. S.
Nevolin, V. N.
Kulikauskas, V. S.
Scarel, G.
Fanciulli, M.
Appeared in: Russian microelectronics
Paging: Volume 35 (2006) nr. 4 pages 210-215
Year: 2006
Contents:
Publisher: Nauka/Interperiodica, Moscow
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 3 of 13 found articles
 
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