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  Computer Simulation of a Nanoscale Ballistic SOI MOSFET with a Sub-10-nm Si Layer
 
 
Title: Computer Simulation of a Nanoscale Ballistic SOI MOSFET with a Sub-10-nm Si Layer
Author: V. V. V'yurkov
A. A. Orlikovsky
A. A. Sidorov
Appeared in: Russian microelectronics
Paging: Volume 32 (2003) nr. 4 pages 9 p.
Year: 2003-07/08-/08
Contents:
Publisher: Kluwer Academic/Plenum Publishers, New York, U.S.A.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

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