|
| << previous | next >> |
Journal description
All volumes of the corresponding journal
All issues of the corresponding volume
All articles of the corresponding issues
Details for article 18 of 22 found articles
| Title: |
Si3N4 SOI Structures Produced by Nitrogen Ion Implantation at High Energies and Beam Current Densities |
| Author: |
Komarov, F. F. Komarov, A. F. Petrov, S. A. |
| Appeared in: |
Russian microelectronics |
| Paging: | Volume 31 (2002) nr. 5 pages 305-309 |
| Year: |
2002 |
| Contents: | |
| Publisher: |
Kluwer Academic Publishers-Plenum Publishers, New York |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 18 of 22 found articles
| << previous | next >> |