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                                       Details for article 8 of 12 found articles
 
 
  Etching of Silicon Nitride in CCl2F2, CHF3, SiF4, and SF6 Reactive Plasma: A Comparative Study
 
 
Title: Etching of Silicon Nitride in CCl2F2, CHF3, SiF4, and SF6 Reactive Plasma: A Comparative Study
Author: Pant, B. D.
Tandon, U. S.
Appeared in: Plasma chemistry and plasma processing
Paging: Volume 19 (1999) nr. 4 pages 545-563
Year: 1999
Contents:
Publisher: Kluwer Academic Publishers-Plenum Publishers, New York
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 8 of 12 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands