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                                       Details for article 11 of 39 found articles
 
 
  Current gain and external quantum efficiency modeling of GeSn based direct bandgap multiple quantum well heterojunction phototransistor
 
 
Title: Current gain and external quantum efficiency modeling of GeSn based direct bandgap multiple quantum well heterojunction phototransistor
Author: Chakraborty, Vedatrayee
Dey, Swagata
Basu, Rikmantra
Mukhopadhyay, Bratati
Basu, P. K.
Appeared in: Optical and quantum electronics
Paging: Volume 49 (2017) nr. 3 pages 1-13
Year: 2017
Contents:
Publisher: Springer US, New York
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 11 of 39 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands