Hydride vapour phase epitaxy processing and enhancement of optoelectronic behaviour of gallium nitride compound semiconductor featured with silicon carbide layer
Titel:
Hydride vapour phase epitaxy processing and enhancement of optoelectronic behaviour of gallium nitride compound semiconductor featured with silicon carbide layer
Auteur:
Revathi, K. Nagabhooshanam, N. Gajbhiye, Pragati Kulshreshta, Ankur Indumathi, S. M. Samyul, A. Seshu Kumar, G. S. V. Srinivasan, R. Sathiyamurthy, S.
Verschenen in:
Journal of materials science. Materials in electronics