Correction to: Enhanced microstructure and electrical performance of a cost-effective Ni/Cu/n-GaN Schottky diode with a V2O5 interlayer for optoelectronic applications
Titel:
Correction to: Enhanced microstructure and electrical performance of a cost-effective Ni/Cu/n-GaN Schottky diode with a V2O5 interlayer for optoelectronic applications
Auteur:
Aswini, Karri Munirathnam, K. Manjunath, V. Reddy, N. Nanda Kumar Alhammadi, Salh Kumar, Koppala Siva Golkonda, Srinivas Reddy Minnam Reddy, Vasudeva Reddy Kim, Woo Kyoung Ranjith, R. Amina, Musarat Dastagiri, S.
Verschenen in:
Journal of materials science. Materials in electronics