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Electromigration behavior comparison between through silicon via and through dielectric via in 2.5D interposer |
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Titel: |
Electromigration behavior comparison between through silicon via and through dielectric via in 2.5D interposer |
Auteur: |
Wu, Fa Li, Hao Cui, Wei Liu, Guangyin Zhang, Lun Feng, Yang Yang, Saiyu Tang, Qin Wang, Pan Shen, Jun Tang, Zhaohuan |
Verschenen in: |
Journal of materials science. Materials in electronics |
Paginering: |
Jaargang 36 () nr. 10 pagina's xx |
Jaar: |
2025-04-01 |
Inhoud: |
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Uitgever: |
Springer US, New York |
Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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