Resistive switching properties in ferromagnetic co-doped ZnO thin films-based memristors for neuromorphic computing
Titel:
Resistive switching properties in ferromagnetic co-doped ZnO thin films-based memristors for neuromorphic computing
Auteur:
Hayat, Muhammad Faisal Rahman, Naveed Ur Ullah, Aziz Rahman, Nasir Sohail, Mohammad Iqbal, Shahid Khan, Alamzeb Abdullaev, Sherzod Althubeiti, Khaled AlOtaibi, Sattam Khan, Rajwali
Verschenen in:
Journal of materials science. Materials in electronics