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Journal description
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Details for article 23 of 62 found articles
| Title: |
Embedded metal and L-shaped oxide layers in silicon on insulator MESFETs: higher electric field tolerance and lower high frequency gate capacitances |
| Author: |
Farahzad, Elham Naderi, Ali |
| Appeared in: |
Journal of materials science. Materials in electronics |
| Paging: | Volume 33 () nr. 25 pages 19971-19984 |
| Year: |
2022-08-04 |
| Contents: | |
| Publisher: |
Springer US, New York |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 23 of 62 found articles
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