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The ideal doping concentration of silicon wafer for single junction hybrid n-Si /PEDOT: PSS solar cells with 3.2% elevated PCE and Voc of 620 mV |
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Titel: |
The ideal doping concentration of silicon wafer for single junction hybrid n-Si /PEDOT: PSS solar cells with 3.2% elevated PCE and Voc of 620 mV |
Auteur: |
Fang, Wenzhong Ni, Zitao wang, Pan Xiang, Chaoyu Sun, Tao Zhang, Jing Wang, Rongfei Yang, Jie Yang, Yu |
Verschenen in: |
Journal of materials science. Materials in electronics |
Paginering: |
Jaargang 31 () nr. 8 pagina's 6398-6405 |
Jaar: |
2020-03-17 |
Inhoud: |
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Uitgever: |
Springer US, New York |
Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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