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                                       Details for article 51 of 65 found articles
 
 
  Recovery process for trimethyl-indium (TMIn) precursor used in compound semiconductors such as InGaN
 
 
Title: Recovery process for trimethyl-indium (TMIn) precursor used in compound semiconductors such as InGaN
Author: Yang, Jaeyeol
Lim, Jaewon
Yoon, Jaesik
Appeared in: Journal of materials science. Materials in electronics
Paging: Volume 30 (2019) nr. 21 pages 19444-19449
Year: 2019
Contents:
Publisher: Springer US, New York
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 51 of 65 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands