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Study of γ-ray radiation influence on SiO2/HfO2/Al2O3/HfO2/Al2O3 memory capacitor by C–V and DLTS |
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Titel: |
Study of γ-ray radiation influence on SiO2/HfO2/Al2O3/HfO2/Al2O3 memory capacitor by C–V and DLTS |
Auteur: |
Cao, Shu-rui Ke, Xiao-yu Ming, Si-ting Wang, Duo-wei Li, Tong Liu, Bing-yan Ma, Yao Li, Yun Yang, Zhi-mei Gong, Min Huang, Ming-min Bi, Jin-shun Xu, Yan-nan Xi, Kai Xu, Gao-bo Majumdar, Sandip |
Verschenen in: |
Journal of materials science. Materials in electronics |
Paginering: |
Jaargang 30 (2019) nr. 12 pagina's 11079-11085 |
Jaar: |
2019 |
Inhoud: |
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Uitgever: |
Springer US, New York |
Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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