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Journal description
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Details for article 113 of 201 found articles
| Title: |
InP/ZnS quantum dots functionalized AlGaAs/InGaAs open gate high electron mobility transistor |
| Author: |
Zhang, Dongyan Li, Zhimin |
| Appeared in: |
Journal of materials science. Materials in electronics |
| Paging: | Volume 29 (2018) nr. 12 pages 10663-10668 |
| Year: |
2018 |
| Contents: | |
| Publisher: |
Springer US, New York |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 113 of 201 found articles
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