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Characterization of GaN and InxGa1−xN films grown by MOCVD and MBE on free-standing GaN templates and quantum well structures |
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Titel: |
Characterization of GaN and InxGa1−xN films grown by MOCVD and MBE on free-standing GaN templates and quantum well structures |
Auteur: |
Ramaiah, K. S. Huang, D. Reshchikov, M. A. Yun, F. Morkoç, H. Jasinski, J. Liliental-Weber, Z. Sone, C. Park, S. S. Lee, K. Y. |
Verschenen in: |
Journal of materials science. Materials in electronics |
Paginering: |
Jaargang 14 (2003) nr. 4 pagina's 233-245 |
Jaar: |
2003 |
Inhoud: |
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Uitgever: |
Kluwer Academic Publishers, Boston |
Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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