Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor
Titel:
Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor
Auteur:
Jung, Hanearl Kim, Woo-Hee Oh, Il-Kwon Lee, Chang-Wan Lansalot-Matras, Clement Lee, Su Jeong Myoung, Jae-Min Lee, Han-Bo-Ram Kim, Hyungjun