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                                       Details for article 6 of 7 found articles
 
 
  Scaling dependence of electron transport in nano-scale Schottky barrier MOSFETs
 
 
Title: Scaling dependence of electron transport in nano-scale Schottky barrier MOSFETs
Author: Toriyama, Shuichi
Sano, Nobuyuki
Appeared in: Journal of computational electronics
Paging: Volume 7 (2008) nr. 4 pages 471-474
Year: 2008
Contents:
Publisher: Springer US, Boston
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 6 of 7 found articles
 
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