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Journal description
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Details for article 25 of 36 found articles
| Title: |
Simulation of the influence of the gate dielectric on amorphous indium-gallium-zinc oxide thin-film transistor reliability |
| Author: |
Labed, Mohamed Sengouga, Nouredine |
| Appeared in: |
Journal of computational electronics |
| Paging: | Volume 18 (2019) nr. 2 pages 509-518 |
| Year: |
2019 |
| Contents: | |
| Publisher: |
Springer US, New York |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 25 of 36 found articles
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