|
| << previous | next >> |
Journal description
All volumes of the corresponding journal
All issues of the corresponding volume
All articles of the corresponding issues
Details for article 26 of 41 found articles
| Title: |
Investigation of a novel SOI LDMOS using p+ buried islands in the drift region by numerical simulations |
| Author: |
Lei, Jianmei Hu, Shengdong Yang, Dong Huang, Ye Yuan, Qi Guo, Jingwei Zeng, Linghui Wang, Siqi Yang, Xuan |
| Appeared in: |
Journal of computational electronics |
| Paging: | Volume 17 (2018) nr. 2 pages 646-652 |
| Year: |
2018 |
| Contents: | |
| Publisher: |
Springer US, New York |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 26 of 41 found articles
| << previous | next >> |