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                                       Details for article 27 of 53 found articles
 
 
  Design and simulation of high breakdown voltage AlGaN/GaN HEMTs with a charged passivation layer for microwave power applications
 
 
Title: Design and simulation of high breakdown voltage AlGaN/GaN HEMTs with a charged passivation layer for microwave power applications
Author: Du, Jiangfeng
Jiang, Zhiguang
Bai, Zhiyuan
Pan, Peilin
Yu, Qi
Appeared in: Journal of computational electronics
Paging: Volume 16 (2017) nr. 3 pages 741-747
Year: 2017
Contents:
Publisher: Springer US, New York
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 27 of 53 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands