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Journal description
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Details for article 21 of 49 found articles
| Title: |
High-k dielectric materials for the gate oxide of a MIS capacitor: effect of interface states on the C–V characteristics |
| Author: |
Hlali, Slah Hizem, Neila Kalboussi, Adel |
| Appeared in: |
Journal of computational electronics |
| Paging: | Volume 15 (2016) nr. 4 pages 1340-1350 |
| Year: |
2016 |
| Contents: | |
| Publisher: |
Springer US, New York |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 21 of 49 found articles
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