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                                       Details for article 29 of 44 found articles
 
 
  Novel 4H-SiC MESFET with modified depletion region by dual well for high-current applications
 
 
Title: Novel 4H-SiC MESFET with modified depletion region by dual well for high-current applications
Author: Orouji, Ali A.
Roustaie, Zohreh
Ramezani, Zeinab
Appeared in: Journal of computational electronics
Paging: Volume 15 (2016) nr. 3 pages 1077-1084
Year: 2016
Contents:
Publisher: Springer US, New York
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 29 of 44 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands