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                                       Details for article 34 of 35 found articles
 
 
  Underlying design advantages for GaN MOSFETs compared with GaN HFETs for power applications
 
 
Title: Underlying design advantages for GaN MOSFETs compared with GaN HFETs for power applications
Author: Bothe, Kyle M.
Barlage, Douglas W.
Appeared in: Journal of computational electronics
Paging: Volume 13 (2013) nr. 1 pages 217-223
Year: 2013
Contents:
Publisher: Springer US, Boston
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 34 of 35 found articles
 
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