Digital Library
Close Browse articles from a journal
 
<< previous    next >>
     Journal description
       All volumes of the corresponding journal
         All issues of the corresponding volume
           All articles of the corresponding issues
                                       Details for article 7 of 30 found articles
 
 
  Electrical Characteristics of p–i–n Mesa-Photodiodes Based on InGaAs/InP Heterostructures
 
 
Title: Electrical Characteristics of p–i–n Mesa-Photodiodes Based on InGaAs/InP Heterostructures
Author: Gogorishvili, I.
Tutunjyan, A.
Sakharova, T.
Melikyan, M.
Khuchua, N.
Kuparashvili, D.
Appeared in: Journal of applied spectroscopy
Paging: Volume 91 () nr. 2 pages 378-383
Year: 2024-05-11
Contents:
Publisher: Springer US, New York
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 7 of 30 found articles
 
<< previous    next >>
 
 Koninklijke Bibliotheek - National Library of the Netherlands