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                                       Details for article 3 of 55 found articles
 
 
  An In-defect complex as a possible explanation for high luminous efficacy of InGaN and AlInN based devices
 
 
Title: An In-defect complex as a possible explanation for high luminous efficacy of InGaN and AlInN based devices
Author: Kessler, P.
Lorenz, K.
Miranda, S. M. C.
Correia, J. G.
Johnston, K.
Vianden, R.
Appeared in: Hyperfine interactions
Paging: Volume 197 (2010) nr. 1-3 pages 187-191
Year: 2010
Contents:
Publisher: Springer Netherlands, Dordrecht
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 3 of 55 found articles
 
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