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                                       Details for article 12 of 20 found articles
 
 
  56.67 fJ/bit single-ended disturb-free 5T loadless 4 kb SRAM using 90 nm CMOS technology
 
 
Title: 56.67 fJ/bit single-ended disturb-free 5T loadless 4 kb SRAM using 90 nm CMOS technology
Author: Wang, Chua-Chin
Wang, Deng-Shain
Chen, Sih-Yu
Appeared in: Analog integrated circuits and signal processing
Paging: Volume 96 (2018) nr. 3 pages 435-443
Year: 2018
Contents:
Publisher: Springer US, New York
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 12 of 20 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands