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  A 350 mV, 2 MHz, 16-kb SRAM with programmable wordline boosting in the 65 nm CMOS technology
 
 
Title: A 350 mV, 2 MHz, 16-kb SRAM with programmable wordline boosting in the 65 nm CMOS technology
Author: Nabavi, Morteza
Sachdev, Manoj
Appeared in: Analog integrated circuits and signal processing
Paging: Volume 109 () nr. 1 pages 213-224
Year: 2021-07-12
Contents:
Publisher: Springer US, New York
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 2 of 22 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands