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Journal description
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Details for article 28 of 37 found articles
| Title: |
Simulation study of a 1200V 4H–SiC lateral MOSFETs with Double-RESURFs technology for reducing saturation current |
| Author: |
Wu, Lijuan He, Jiahong Shen, Zhipeng Zhu, Gengbin Tang, Qiqi Yi, Zongyang Yang, Guanglin Yang, Deqiang |
| Appeared in: |
Micro and nanostructures |
| Paging: | Volume 205 () nr. C pages p. |
| Year: |
2025 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 28 of 37 found articles
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