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                                       Details for article 10 of 19 found articles
 
 
  Investigation of non-volatile and photoelectric storage characteristics for MoS2/h-BN/graphene heterojunction floating-gate transistor with the different tunneling layer thicknesses
 
 
Title: Investigation of non-volatile and photoelectric storage characteristics for MoS2/h-BN/graphene heterojunction floating-gate transistor with the different tunneling layer thicknesses
Author: Li, Wei
Mu, Tianhui
Chen, Yuhua
Dai, Mingjian
Sun, Pengcheng
Li, Jiaying
Li, Weilin
Chen, Zhanzi
Wang, Zhuowen
Yang, Ruijing
Chen, Zhao
Wang, Yucheng
Wu, Yupan
Wang, Shaoxi
Appeared in: Micro and nanostructures
Paging: Volume 187 () nr. C pages p.
Year: 2024
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 10 of 19 found articles
 
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