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  Characterization of the novel ICeGaN 650V/ 8.5 A, 200 mΩ power device technology
 
 
Title: Characterization of the novel ICeGaN 650V/ 8.5 A, 200 mΩ power device technology
Author: Mukherjee, K.
Arnold, M.
Zhang, J.
Ledins, K.
Michalak, M.
Fung, O.
Efthymiou, L.
Ansari, Z.
Longobardi, G.
Udrea, F.
Appeared in: Power electronic devices and components
Paging: Volume 5 () nr. C pages p.
Year: 2023
Contents:
Publisher: The Author(s)
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

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