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Journal description
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Details for article 9 of 11 found articles
| Title: |
PECVD SiN x passivation with more than 8 MV/cm breakdown strength for GaN-on-Si wafer stress management |
| Author: |
Moser, Matthias Pradhan, Mamta Alomari, Mohammed Heuken, Michael Schmitt, Thomas Kallfass, Ingmar Burghartz, Joachim N. |
| Appeared in: |
Power electronic devices and components |
| Paging: | Volume 4 () nr. C pages p. |
| Year: |
2023 |
| Contents: | |
| Publisher: |
Published by Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 9 of 11 found articles
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