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Details for article 2 of 16 found articles
| Title: |
A new preparation approach for high-resolution TEM analysis of electrically active defects in p-GaN HEMT devices from two orthogonal perspectives |
| Author: |
Diehle, Patrick Altmann, Frank Hübner, Susanne Bruckmeier, Johannes Neumann, Richard Stabentheiner, Manuel Ostermaier, Clemens |
| Appeared in: |
Power electronic devices and components |
| Paging: | Volume 11 () nr. C pages p. |
| Year: |
2025 |
| Contents: | |
| Publisher: |
Published by Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 2 of 16 found articles
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