|
Physical and electrical characterizations of low n-doped MOCVD GaN-on-sapphire layers for power electronics applications |
|
|
|
Title: |
Physical and electrical characterizations of low n-doped MOCVD GaN-on-sapphire layers for power electronics applications |
Author: |
Ignoumba-Ignoumba, Ndembi Sonneville, Camille Bidaud, Adrien Brosselard, Pierre Frayssinet, Eric Bartoli, Florian Cordier, Yvon Medjdoub, Farid Planson, Dominique Buttay, Cyril |
Appeared in: |
Power electronic devices and components |
Paging: |
Volume 11 () nr. C pages p. |
Year: |
2025 |
Contents: |
|
Publisher: |
The Author(s) |
Source file: |
Elektronische Wetenschappelijke Tijdschriften |
|
|
|
|