Review on the degradation of GaN-based lateral power transistors
Titel:
Review on the degradation of GaN-based lateral power transistors
Auteur:
De Santi, C. Buffolo, M. Rossetto, I. Bordignon, T. Brusaterra, E. Caria, A. Chiocchetta, F. Favero, D. Fregolent, M. Masin, F. Modolo, N. Nardo, A. Piva, F. Rampazzo, F. Sharma, C. Trivellin, N. Zhan, G. Meneghini, M. Zanoni, E. Meneghesso, G.
Verschenen in:
e-Prime, advances in electrical engineering, electronics and energy