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                                       Details for article 8 of 10 found articles
 
 
  JFET Region Design Trade-Offs of 650 V 4H-SiC Planar Power MOSFETs
 
 
Title: JFET Region Design Trade-Offs of 650 V 4H-SiC Planar Power MOSFETs
Author: Liu, Tianshi
Zhu, Shengnan
Salemi, Arash
Sheridan, David
White, Marvin H.
Agarwal, Anant K.
Appeared in: Solid state electronics letters
Paging: Volume 3 () nr. C pages 53-58
Year: 2021
Contents:
Publisher: The Authors
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 8 of 10 found articles
 
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