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Immobilization of partial dislocations bounding double Shockley stacking faults in 4H-SiC observed by in situ synchrotron X-ray topography |
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Titel: |
Immobilization of partial dislocations bounding double Shockley stacking faults in 4H-SiC observed by in situ synchrotron X-ray topography |
Auteur: |
Fujie, Fumihiro Harada, Shunta Suo, Hiromasa Raghothamachar, Balaji Dudley, Michael Hanada, Kenji Koizumi, Haruhiko Kato, Tomohisa Tagawa, Miho Ujihara, Toru |
Verschenen in: |
Materialia |
Paginering: |
Jaargang 20 () nr. C pagina's p. |
Jaar: |
2021 |
Inhoud: |
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Uitgever: |
Acta Materialia Inc. |
Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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