Engineering shallow and deep level defects in κ-Ga2O3 thin films: comparing metal-organic vapour phase epitaxy to molecular beam epitaxy and the effect of annealing treatments
Titel:
Engineering shallow and deep level defects in κ-Ga2O3 thin films: comparing metal-organic vapour phase epitaxy to molecular beam epitaxy and the effect of annealing treatments
Auteur:
Mazzolini, P. Varley, J.B. Parisini, A. Sacchi, A. Pavesi, M. Bosio, A. Bosi, M. Seravalli, L. Janzen, B.M. Marggraf, M.N. Bernhardt, N. Wagner, M.R. Ardenghi, A. Bierwagen, O. Falkenstein, A. Kler, J. De Souza, R.A. Martin, M. Mezzadri, F. Borelli, C. Fornari, R.