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                                       Details for article 26 of 41 found articles
 
 
  Pressure-driven growth mechanisms and uniformity analysis of β-Ga2O3/4H-SiC heteroepitaxy
 
 
Title: Pressure-driven growth mechanisms and uniformity analysis of β-Ga2O3/4H-SiC heteroepitaxy
Author: Wei, Moyu
Li, Yunkai
Zhao, Siqi
Jiao, Jingyi
Pei, Yicheng
Yan, Guoguo
Liu, Xingfang
Appeared in: Surfaces and interfaces
Paging: Volume 66 () nr. C pages p.
Year: 2025
Contents:
Publisher: Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 26 of 41 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands