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                                       Details for article 2 of 117 found articles
 
 
  Adsorption mechanism of hexachlorodisilane for low-temperature atomic layer deposition of silicon nitride
 
 
Title: Adsorption mechanism of hexachlorodisilane for low-temperature atomic layer deposition of silicon nitride
Author: Kim, Jiwon
Shong, Bonggeun
Appeared in: Surfaces and interfaces
Paging: Volume 64 () nr. C pages p.
Year: 2025
Contents:
Publisher: Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 2 of 117 found articles
 
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