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Improved electrical contact property of Si-doped GaN thin films deposited by PEALD with various growth cycle ratio of SiNx and GaN |
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Titel: |
Improved electrical contact property of Si-doped GaN thin films deposited by PEALD with various growth cycle ratio of SiNx and GaN |
Auteur: |
Zhang, Zhi-Xuan Jiang, Shi-Cong Wu, Wan-Yu Gao, Peng Jiang, Linqin Qiu, Yu Wuu, Dong-Sing Lai, Feng-Min Lien, Shui-Yang Zhu, Wen-Zhang |
Verschenen in: |
Surfaces and interfaces |
Paginering: |
Jaargang 41 () nr. C pagina's p. |
Jaar: |
2023 |
Inhoud: |
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Uitgever: |
Elsevier B.V. |
Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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