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  Band gap engineering of 2H-MX2 (M = Mo; X  = S, Se, Te) monolayers using strain effect
 
 
Title: Band gap engineering of 2H-MX2 (M = Mo; X  = S, Se, Te) monolayers using strain effect
Author: Anisha,
Kumar, Ramesh
Srivastava, Sunita
Appeared in: Materials today: proceedings
Paging: Volume 54 () nr. P3 pages 677-681
Year: 2022
Contents:
Publisher: Published by Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 5 of 70 found articles
 
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