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                                       Details for article 18 of 49 found articles
 
 
  Exploration of Trap Levels in GaN and Al0.2Ga0.8N Layers by Temperature-Dependent Photoconductivity Measurement
 
 
Title: Exploration of Trap Levels in GaN and Al0.2Ga0.8N Layers by Temperature-Dependent Photoconductivity Measurement
Author: Prakash, Nisha
Kumar, Gaurav
Barvat, Arun
Anand, Kritika
Choursia, B.
Pal, Prabir
Khanna, Suraj P.
Appeared in: Materials today: proceedings
Paging: Volume 5 (2018) nr. 1P2 pages 2132-2138
Year: 2018
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 18 of 49 found articles
 
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