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Details for article 82 of 135 found articles
| Title: |
Lateral variation doped wide bottom trench gate IGBT for reduced on-resistance with improved gate charge |
| Author: |
Vaidya, Mahesh Naugarhiya, Alok Verma, Shrish |
| Appeared in: |
Materials today: proceedings |
| Paging: | Volume 46 () nr. P10 pages 4587-4592 |
| Year: |
2021 |
| Contents: | |
| Publisher: |
Published by Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 82 of 135 found articles
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