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                                       Details for article 28 of 48 found articles
 
 
  Physics based model for potential distribution and threshold voltage of gate-all-around tunnel field effect transistor (GAA-TFET)
 
 
Title: Physics based model for potential distribution and threshold voltage of gate-all-around tunnel field effect transistor (GAA-TFET)
Author: Usha, C.
Vimala, P.
Ramakrishnan, V.N.
Appeared in: Materials today: proceedings
Paging: Volume 45 () nr. P4 pages 4052-4057
Year: 2021
Contents:
Publisher: Published by Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 28 of 48 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands