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                                       Details for article 46 of 204 found articles
 
 
  Effect of Cu thickness and temperature on growth of graphene on 8-inch Cu/SiO2/Si wafer using cold-wall CVD reactor
 
 
Title: Effect of Cu thickness and temperature on growth of graphene on 8-inch Cu/SiO2/Si wafer using cold-wall CVD reactor
Author: Soriadi, Nurhidaya
Abdullah, Mohd Faizol
Md Yakin, Firzalaila Syarina
Mohamad Badaruddin, Siti Aishah
Syono, Mohd Ismahadi
Appeared in: Materials today: proceedings
Paging: Volume 42 () nr. P5 pages 2948-2952
Year: 2021
Contents:
Publisher: Published by Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 46 of 204 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands