Principle of proximity: Plasmonic hot electrons motivate donator-adjacent semiconductor defects with enhanced electrocatalytic hydrogen evolution
Titel:
Principle of proximity: Plasmonic hot electrons motivate donator-adjacent semiconductor defects with enhanced electrocatalytic hydrogen evolution
Auteur:
Li, Bang Lin Zou, Hao Lin Tian, Jie Kang Chen, Guo Wang, Xiao Hu Duan, Huan Li, Xiao Lin Shi, Yan Chen, Jing Rong Li, Ling Jie Lei, Jing Lei Luo, Hong Qun Li, Nian Bing